IRFH5025TR2PBF Infineon Technologies
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details IRFH5025TR2PBF Infineon Technologies
Description: MOSFET N-CH 250V 3.8A PQFN, Packaging: Cut Tape (CT), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), Rds On (Max) @ Id, Vgs: 100mOhm @ 5.7A, 10V, Vgs(th) (Max) @ Id: 5V @ 150µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Obsolete, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V.
Weitere Produktangebote IRFH5025TR2PBF
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
IRFH5025TR2PBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 250V 3.8A PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 5.7A, 10V Vgs(th) (Max) @ Id: 5V @ 150µA Supplier Device Package: 8-PQFN (5x6) Part Status: Obsolete Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V |
Produkt ist nicht verfügbar |
||
IRFH5025TR2PBF | Hersteller : Infineon / IR | MOSFET MOSFT 250V 31A 104mOhm 36nC Qg |
Produkt ist nicht verfügbar |