IRFH5010TR2PBF Infineon Technologies
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details IRFH5010TR2PBF Infineon Technologies
Description: MOSFET N-CH 100V 13A 5X6 PQFN, Packaging: Cut Tape (CT), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V, Vgs(th) (Max) @ Id: 4V @ 150µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Obsolete, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V.
Weitere Produktangebote IRFH5010TR2PBF
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
IRFH5010TR2PBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 13A 5X6 PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: 8-PQFN (5x6) Part Status: Obsolete Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V |
Produkt ist nicht verfügbar |
||
IRFH5010TR2PBF | Hersteller : Infineon / IR | MOSFET MOSFT 100V 100A 9.0mOhm 65nC Qg |
Produkt ist nicht verfügbar |