IRFH4255DTRPBF Infineon Technologies
auf Bestellung 3437 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 71+ | 2.16 EUR |
| 100+ | 1.99 EUR |
| 250+ | 1.84 EUR |
| 500+ | 1.7 EUR |
| 1000+ | 1.58 EUR |
| 2500+ | 1.47 EUR |
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Technische Details IRFH4255DTRPBF Infineon Technologies
Description: MOSFET 2N-CH 25V 64A/105A PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 31W, 38W, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 64A, 105A, Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V, Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 35µA, Supplier Device Package: PQFN (5x6).
Weitere Produktangebote IRFH4255DTRPBF
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Verfügbarkeit |
Preis ohne MwSt |
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IRFH4255DTRPBF | Hersteller : Infineon Technologies |
 MOSFET 25V Single N-Ch HEXFET PWR 50A |
auf Bestellung 3803 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFH4255DTRPBF | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 25V 64A/105A PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 31W, 38W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 64A, 105A Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 35µA Supplier Device Package: PQFN (5x6) |
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