IRFH4213DTRPBF Infineon Technologies
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Technische Details IRFH4213DTRPBF Infineon Technologies
Description: MOSFET N-CH 25V 40A PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), Rds On (Max) @ Id, Vgs: 1.35mOhm @ 50A, 10V, Power Dissipation (Max): 3.6W (Ta), 96W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 100µA, Supplier Device Package: PQFN (5x6), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3520 pF @ 13 V.
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IRFH4213DTRPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 25V 40A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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IRFH4213DTRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 25V 40A PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 1.35mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 100µA Supplier Device Package: PQFN (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3520 pF @ 13 V |
Produkt ist nicht verfügbar |