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IRFD9210PBF VISHAY
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Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -0.25A; 1W; DIP4
Power dissipation: 1W
Case: DIP4
Mounting: THT
Drain-source voltage: -200V
Drain current: -250mA
On-state resistance: 3Ω
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 8.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2204 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
64+ | 1.13 EUR |
100+ | 0.72 EUR |
112+ | 0.64 EUR |
146+ | 0.49 EUR |
154+ | 0.46 EUR |
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Produktbewertung abgeben
Technische Details IRFD9210PBF VISHAY
Description: MOSFET P-CH 200V 400MA 4DIP, Packaging: Bulk, Package / Case: 4-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 240mA, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 4-HVMDIP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V.
Weitere Produktangebote IRFD9210PBF nach Preis ab 0.46 EUR bis 1.91 EUR
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IRFD9210PBF | Hersteller : VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -0.25A; 1W; DIP4 Power dissipation: 1W Case: DIP4 Mounting: THT Drain-source voltage: -200V Drain current: -250mA On-state resistance: 3Ω Type of transistor: P-MOSFET Polarisation: unipolar Gate charge: 8.9nC Kind of channel: enhanced Gate-source voltage: ±20V |
auf Bestellung 2204 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFD9210PBF | Hersteller : Vishay |
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auf Bestellung 242 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFD9210PBF | Hersteller : Vishay / Siliconix |
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auf Bestellung 2836 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFD9210PBF | Hersteller : Vishay Siliconix |
![]() Packaging: Bulk Package / Case: 4-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 240mA, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 4-HVMDIP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V |
auf Bestellung 6093 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFD9210PBF | Hersteller : Vishay |
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auf Bestellung 258 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFD9210PBF | Hersteller : Vishay |
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auf Bestellung 258 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFD9210PBF | Hersteller : Vishay |
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