Produkte > HARRIS CORPORATION > IRFD9113
IRFD9113

IRFD9113 Harris Corporation

HRISSD79-1.pdf?t.download=true&u=5oefqw Hersteller: Harris Corporation
Description: -0.6A, -80V, 1.6 OHM, P-CHANNEL
Packaging: Bulk
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 300mA, 10V
Supplier Device Package: 4-DIP, Hexdip, HVMDIP
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
auf Bestellung 1090 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
485+1.02 EUR
Mindestbestellmenge: 485
Produktrezensionen
Produktbewertung abgeben

Technische Details IRFD9113 Harris Corporation

Description: -0.6A, -80V, 1.6 OHM, P-CHANNEL, Packaging: Bulk, Package / Case: 4-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 600mA (Ta), Rds On (Max) @ Id, Vgs: 1.6Ohm @ 300mA, 10V, Supplier Device Package: 4-DIP, Hexdip, HVMDIP, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V.

Weitere Produktangebote IRFD9113

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IRFD9113 IRFD9113 Hersteller : Vishay / Siliconix HRISSD79-1.pdf?t.download=true&u=5oefqw MOSFET P-Chan 100V 0.7 Amp
auf Bestellung 176 Stücke:
Lieferzeit 10-14 Tag (e)