IRFBL3703

IRFBL3703 Infineon Technologies


irfbl3703.pdf Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 260A SUPER D2PAK
Packaging: Tube
Package / Case: Super D2-Pak
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 76A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Super D2-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 209 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8250 pF @ 25 V
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Technische Details IRFBL3703 Infineon Technologies

Description: MOSFET N-CH 30V 260A SUPER D2PAK, Packaging: Tube, Package / Case: Super D2-Pak, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 260A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 76A, 10V, Power Dissipation (Max): 3.8W (Ta), 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: Super D2-Pak, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 209 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8250 pF @ 25 V.

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IRFBL3703 Hersteller : Infineon Technologies irfbl3703.pdf Infineon
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