IRFBC40LCPBF VISHAY
Hersteller: VISHAYCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.9A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.9A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 41+ | 1.76 EUR |
| 46+ | 1.56 EUR |
| 52+ | 1.39 EUR |
| 60+ | 1.2 EUR |
| 63+ | 1.14 EUR |
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Technische Details IRFBC40LCPBF VISHAY
Description: MOSFET N-CH 600V 6.2A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V.
Weitere Produktangebote IRFBC40LCPBF nach Preis ab 1.14 EUR bis 4.86 EUR
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IRFBC40LCPBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 3.9A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.9A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 150 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFBC40LCPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 600V 6.2A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
auf Bestellung 1056 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFBC40LCPBF | Hersteller : Vishay Semiconductors |
MOSFET 600V N-CH HEXFET |
auf Bestellung 2119 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFBC40LCPBF | Hersteller : Vishay |
Trans MOSFET N-CH 600V 6.2A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IRFBC40LCPBF | Hersteller : Vishay |
Trans MOSFET N-CH 600V 6.2A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IRFBC40LCPBF | Hersteller : VISHAY |
Description: VISHAY - IRFBC40LCPBF - Leistungs-MOSFET, n-Kanal, 600 V, 6.2 A, 1.2 ohm, TO-220AB, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 600 Dauer-Drainstrom Id: 6.2 Rds(on)-Messspannung Vgs: 10 Verlustleistung Pd: 125 Bauform - Transistor: TO-220AB Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 1.2 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 4 SVHC: To Be Advised |
Produkt ist nicht verfügbar |