IRFB4233PBF Infineon Technologies
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Technische Details IRFB4233PBF Infineon Technologies
Description: MOSFET N-CH 230V 56A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), Rds On (Max) @ Id, Vgs: 37mOhm @ 28A, 10V, Power Dissipation (Max): 370W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 230 V, Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5510 pF @ 25 V.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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IRFB4233PBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 230V 56A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 37mOhm @ 28A, 10V Power Dissipation (Max): 370W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 230 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5510 pF @ 25 V |
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IRFB4233PBF | Hersteller : Infineon Technologies | MOSFET PDP SWITCH 230V 1 N-CH HEXFET |
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