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IRFB20N50KPBF VISHAY
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Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 280W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 280W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 529 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
23+ | 3.13 EUR |
26+ | 2.83 EUR |
34+ | 2.16 EUR |
35+ | 2.04 EUR |
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Technische Details IRFB20N50KPBF VISHAY
Description: MOSFET N-CH 500V 20A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 12A, 10V, Power Dissipation (Max): 280W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 25 V.
Weitere Produktangebote IRFB20N50KPBF nach Preis ab 2.04 EUR bis 13.25 EUR
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IRFB20N50KPBF | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 280W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Power dissipation: 280W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 529 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB20N50KPBF | Hersteller : Vishay Semiconductors |
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auf Bestellung 19991 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFB20N50KPBF | Hersteller : Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 12A, 10V Power Dissipation (Max): 280W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 25 V |
auf Bestellung 786 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFB20N50KPBF | Hersteller : Vishay |
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auf Bestellung 79 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB20N50KPBF Produktcode: 35981 |
Hersteller : Vishay |
![]() Gehäuse: TO-220 Uds,V: 500 Idd,A: 20 Rds(on), Ohm: 0.21 Ciss, pF/Qg, nC: 2870/110 JHGF: THT |
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IRFB20N50KPBF | Hersteller : Vishay |
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IRFB20N50KPBF | Hersteller : Vishay |
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IRFB20N50KPBF | Hersteller : Vishay |
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Produkt ist nicht verfügbar |