auf Bestellung 3164 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.59 EUR |
| 10+ | 2.16 EUR |
| 100+ | 1.94 EUR |
| 250+ | 1.66 EUR |
| 500+ | 1.62 EUR |
| 5000+ | 1.56 EUR |
| 10000+ | 1.52 EUR |
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Technische Details IRF9640PBF-BE3 Vishay / Siliconix
Description: MOSFET P-CH 200V 11A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25.
Weitere Produktangebote IRF9640PBF-BE3 nach Preis ab 2.04 EUR bis 3.78 EUR
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IRF9640PBF-BE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET P-CH 200V 11A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
auf Bestellung 133 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF9640PBF-BE3 | Hersteller : VISHAY |
Description: VISHAY - IRF9640PBF-BE3 - MOSFET, P-CH, 200V, 11A, TO-220AB tariffCode: 85412900 Transistormontage: Through Hole Drain-Source-Spannung Vds: 200V rohsCompliant: YES Dauer-Drainstrom Id: 11A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 125W Bauform - Transistor: TO-220AB Anzahl der Pins: 3Pin(s) Produktpalette: IRF9640 Series productTraceability: Yes-Date/Lot Code Kanaltyp: P Channel Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.5ohm directShipCharge: 25 |
auf Bestellung 71 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF9640PBF-BE3 | Hersteller : Vishay |
Surface Mount Fast Switching, Low Resistance Power MOSFET |
Produkt ist nicht verfügbar |
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IRF9640PBF-BE3 | Hersteller : Vishay |
Trans MOSFET P-CH 200V 11A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |