Technische Details IRF9328PBF Infineon Technologies
Description: MOSFET P-CH 30V 12A 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 11.9mOhm @ 12A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 2.4V @ 25µA, Supplier Device Package: 8-SO, Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V.
Weitere Produktangebote IRF9328PBF
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IRF9328PBF Produktcode: 39736 |
Transistoren > Transistoren P-Kanal-Feld |
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IRF9328PBF | Hersteller : Infineon Technologies | Trans MOSFET P-CH 30V 12A 8-Pin SOIC N Tube |
Produkt ist nicht verfügbar |
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IRF9328PBF | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 30V 12A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 11.9mOhm @ 12A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 25µA Supplier Device Package: 8-SO Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRF9328PBF | Hersteller : Infineon / IR | MOSFET 1 P-CH -30V HEXFET 11.9mOhms 8.5nC |
Produkt ist nicht verfügbar |