IRF9204PBF

IRF9204PBF Infineon Technologies


irf9204pbf.pdf Hersteller: Infineon Technologies
Trans MOSFET P-CH Si 40V 74A 3-Pin(3+Tab) TO-220AB
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Technische Details IRF9204PBF Infineon Technologies

Description: MOSFET P-CH 40V 56A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 56A (Ta), Rds On (Max) @ Id, Vgs: 16mOhm @ 37A, 10V, Power Dissipation (Max): 143W (Tc), Vgs(th) (Max) @ Id: 3V @ 100µA, Supplier Device Package: TO-220AB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7676 pF @ 25 V.

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IRF9204PBF IRF9204PBF Hersteller : Infineon Technologies IRF9204PbF.pdf Description: MOSFET P-CH 40V 56A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 37A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 3V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7676 pF @ 25 V
Produkt ist nicht verfügbar