IRF9204PBF Infineon Technologies
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Technische Details IRF9204PBF Infineon Technologies
Description: MOSFET P-CH 40V 56A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 56A (Ta), Rds On (Max) @ Id, Vgs: 16mOhm @ 37A, 10V, Power Dissipation (Max): 143W (Tc), Vgs(th) (Max) @ Id: 3V @ 100µA, Supplier Device Package: TO-220AB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7676 pF @ 25 V.
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IRF9204PBF | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 40V 56A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 37A, 10V Power Dissipation (Max): 143W (Tc) Vgs(th) (Max) @ Id: 3V @ 100µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7676 pF @ 25 V |
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