auf Bestellung 4908 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 1.74 EUR |
| 10+ | 1.4 EUR |
| 100+ | 1.35 EUR |
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Technische Details IRF830APBF-BE3 Vishay / Siliconix
Description: MOSFET N-CH 500V 5A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3A, 10V, Power Dissipation (Max): 74W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V.
Weitere Produktangebote IRF830APBF-BE3 nach Preis ab 1.04 EUR bis 1.74 EUR
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IRF830APBF-BE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 500V 5A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V |
auf Bestellung 963 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF830APBF-BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 500V 5A |
Produkt ist nicht verfügbar |
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| IRF830APBF-BE3 | Hersteller : Vishay |
IRF830APBF-BE3 |
Produkt ist nicht verfügbar |