IRF8302MTRPBF Infineon Technologies
auf Bestellung 65 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.96 EUR |
| 10+ | 4.17 EUR |
| 100+ | 3.36 EUR |
| 500+ | 2.82 EUR |
| 1000+ | 2.34 EUR |
| 2500+ | 2.24 EUR |
| 4800+ | 2.16 EUR |
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Technische Details IRF8302MTRPBF Infineon Technologies
Description: MOSFET N-CH 30V 31A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric MX, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 190A (Tc), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 31A, 10V, Power Dissipation (Max): 2.8W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 150µA, Supplier Device Package: DIRECTFET™ MX, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 6030 pF @ 15 V.
Weitere Produktangebote IRF8302MTRPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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IRF8302MTRPBF | Hersteller : ROCHESTER ELECTRONICS |
 Description: ROCHESTER ELECTRONICS - IRF8302MTRPBF - IRF8302 12V-300V N-CHANNEL POWER MOSFETtariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 7544 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF8302MTRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 31A 7-Pin Direct-FET MX T/R |
Produkt ist nicht verfügbar |
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IRF8302MTRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 31A 7-Pin Direct-FET MX T/R |
Produkt ist nicht verfügbar |
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IRF8302MTRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 31A 7-Pin Direct-FET MX T/R |
Produkt ist nicht verfügbar |
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IRF8302MTRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 31A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MX Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 190A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 31A, 10V Power Dissipation (Max): 2.8W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 150µA Supplier Device Package: DIRECTFET™ MX Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6030 pF @ 15 V |
Produkt ist nicht verfügbar |
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IRF8302MTRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 31A DIRECTFET Packaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric MX Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 190A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 31A, 10V Power Dissipation (Max): 2.8W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 150µA Supplier Device Package: DIRECTFET™ MX Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6030 pF @ 15 V |
Produkt ist nicht verfügbar |