IRF7905PBF

IRF7905PBF Infineon Technologies


infineon-irf7905-datasheet-v01_01-en.pdf Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 7.8A/8.9A 8-Pin SOIC Tube
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Technische Details IRF7905PBF Infineon Technologies

Description: MOSFET 2N-CH 30V 7.8A/8.9A 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 7.8A, 8.9A, Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V, Rds On (Max) @ Id, Vgs: 21.8mOhm @ 7.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.25V @ 25µA, Supplier Device Package: 8-SO.

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IRF7905PBF IRF7905PBF Hersteller : Infineon Technologies irf7905pbf.pdf?fileId=5546d462533600a40153560c90a41d37 Description: MOSFET 2N-CH 30V 7.8A/8.9A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.8A, 8.9A
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Rds On (Max) @ Id, Vgs: 21.8mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Supplier Device Package: 8-SO
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IRF7905PBF IRF7905PBF Hersteller : Infineon Technologies international_rectifier_irf7905pbf-1169062.pdf MOSFETs 30V DUAL N-CH HEXFET 20V VGS MAX
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