IRF7805PBF

IRF7805PBF Infineon Technologies


Infineon-IRF7805PBF-DS-v02_00-EN-1226489.pdf Hersteller: Infineon Technologies
MOSFET 30V 1 N-CH HEXFET 11mOhms 22nC
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Technische Details IRF7805PBF Infineon Technologies

Description: MOSFET N-CH 30V 13A 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), Rds On (Max) @ Id, Vgs: 11mOhm @ 7A, 4.5V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V.

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IRF7805PBF IRF7805PBF Hersteller : ROCHESTER ELECTRONICS IRSDS10170-1.pdf?t.download=true&u=5oefqw Description: ROCHESTER ELECTRONICS - IRF7805PBF - IRF7805 12V-300V N-CHANNEL POWER MOSFET
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 952 Stücke:
Lieferzeit 14-21 Tag (e)
IRF7805PBF IRF7805PBF
Produktcode: 79757
Hersteller : IR irf7805pbf-datasheet.pdf Transistoren > MOSFET N-CH
Gehäuse: SO-8
Uds,V: 30 V
Idd,A: 10 A
Rds(on), Ohm: 11 mOhm
Ciss, pF/Qg, nC: /22
JHGF: SMD
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Anzahl Preis ohne MwSt
1+0.8 EUR
10+ 0.72 EUR
IRF7805PBF IRF7805PBF Hersteller : Infineon Technologies irf7805pbf.pdf?fileId=5546d462533600a401535607ccc41cc0 Description: MOSFET N-CH 30V 13A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Produkt ist nicht verfügbar