IRF7484Q Infineon Technologies
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Technische Details IRF7484Q Infineon Technologies
Description: MOSFET N-CH 40V 14A 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), Rds On (Max) @ Id, Vgs: 10mOhm @ 14A, 7V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 7V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 7 V, Input Capacitance (Ciss) (Max) @ Vds: 3520 pF @ 25 V.
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IRF7484Q | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 14A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 14A, 7V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 7V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 7 V Input Capacitance (Ciss) (Max) @ Vds: 3520 pF @ 25 V |
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