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IRF7421D1TRPBF Infineon Technologies
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Description: MOSFET N-CH 30V 5.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.1A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
auf Bestellung 1391 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
19+ | 0.95 EUR |
25+ | 0.72 EUR |
100+ | 0.6 EUR |
500+ | 0.55 EUR |
1000+ | 0.53 EUR |
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Technische Details IRF7421D1TRPBF Infineon Technologies
Description: MOSFET N-CH 30V 5.8A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), Rds On (Max) @ Id, Vgs: 35mOhm @ 4.1A, 10V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V.
Weitere Produktangebote IRF7421D1TRPBF
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IRF7421D1TRPBF | Hersteller : IOR |
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auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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IRF7421D1TRPBF | Hersteller : IR |
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auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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IRF7421D1TRPBF | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |
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IRF7421D1TRPBF | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |
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IRF7421D1TRPBF | Hersteller : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 4.1A, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRF7421D1TRPBF | Hersteller : Infineon / IR |
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Produkt ist nicht verfügbar |