![IRF7410PBF IRF7410PBF](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/4847/448_8-SOIC.jpg)
IRF7410PBF Infineon Technologies
![irf7410pbf.pdf?fileId=5546d462533600a4015355fa75d71bb0](/images/adobe-acrobat.png)
Description: MOSFET P-CH 12V 16A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8676 pF @ 10 V
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details IRF7410PBF Infineon Technologies
Description: MOSFET P-CH 12V 16A 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 4.5V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 8676 pF @ 10 V.
Weitere Produktangebote IRF7410PBF
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
![]() |
IRF7410PBF | Hersteller : Infineon Technologies |
![]() |
Produkt ist nicht verfügbar |