IRF7350PBF

IRF7350PBF Infineon Technologies


irf7350pbf.pdf Hersteller: Infineon Technologies
Trans MOSFET N/P-CH Si 100V 2.1A/1.5A 8-Pin SOIC
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details IRF7350PBF Infineon Technologies

Description: MOSFET N/P-CH 100V 2.1A/1.5A 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 2.1A, 1.5A, Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V, Rds On (Max) @ Id, Vgs: 210mOhm @ 2.1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SO, Part Status: Obsolete.

Weitere Produktangebote IRF7350PBF

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IRF7350PBF IRF7350PBF Hersteller : Infineon Technologies IRF7350PbF.pdf Description: MOSFET N/P-CH 100V 2.1A/1.5A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.1A, 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
Rds On (Max) @ Id, Vgs: 210mOhm @ 2.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Produkt ist nicht verfügbar
IRF7350PBF IRF7350PBF Hersteller : Infineon / IR irf7350-1169405.pdf MOSFET 100V DUAL N- & P- CH HEXFET
Produkt ist nicht verfügbar