auf Bestellung 1708 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 3.01 EUR |
10+ | 2.11 EUR |
100+ | 1.78 EUR |
250+ | 1.74 EUR |
500+ | 1.56 EUR |
1000+ | 1.34 EUR |
2000+ | 1.33 EUR |
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Technische Details IRF730APBF-BE3 Vishay / Siliconix
Description: MOSFET N-CH 400V 5.5A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V, Power Dissipation (Max): 74W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V.
Weitere Produktangebote IRF730APBF-BE3 nach Preis ab 1.69 EUR bis 3.03 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IRF730APBF-BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 400V 5.5A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V |
auf Bestellung 984 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF730APBF-BE3 | Hersteller : Vishay | Trans MOSFET N-CH 400V 5.5A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IRF730APBF-BE3 | Hersteller : Vishay | Surface Mount Fast Switching, Low Resistance Power MOSFET |
Produkt ist nicht verfügbar |
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IRF730APBF-BE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 5.5A Pulsed drain current: 22A Power dissipation: 74W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Gate charge: 22nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IRF730APBF-BE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 5.5A Pulsed drain current: 22A Power dissipation: 74W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Gate charge: 22nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |