IRF710
Produktcode: 23685
Hersteller: IRGehäuse: TO-220
Uds,V: 400
Idd,A: 2
Rds(on), Ohm: 03.06.2015
Ciss, pF/Qg, nC: 170/17
JHGF: THT
verfügbar 15 Stück:
Anzahl | Preis ohne MwSt |
---|---|
1+ | 0.57 EUR |
10+ | 0.53 EUR |
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Technische Details IRF710 IR
- MOSFET, N TO-220
- Transistor Type:MOSFET
- Transistor Polarity:N
- Cont Current Id:1.5A
- On State Resistance:3.6ohm
- Case Style:TO-220AB
- Current Temperature:25`C
- Full Power Rating Temperature:25`C
- Lead Spacing:2.54mm
- Max Voltage Vds:400V
- No. of Pins:3
- No. of Transistors:1
- Pin Configuration:a
- Pin Format:1 g
- 2 d/tab
- 3 s
- Power Dissipation:20W
- Power Dissipation Pd:20W
- Pulse Current Idm:6A
- Transistor Case Style:TO-220AB
Weitere Produktangebote IRF710 nach Preis ab 0.67 EUR bis 1.27 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||
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IRF710 | Hersteller : Harris Corporation |
Description: PFET, 2A I(D), 400V, 3.6OHM, 1-E Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.1A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 25 V |
auf Bestellung 4630 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF710 | Hersteller : onsemi |
Description: MOSFET N-CH 400V 2A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V |
auf Bestellung 4400 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF710 | Hersteller : Fairchild Semiconductor |
Description: MOSFET N-CH 400V 2A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.1A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 25 V |
auf Bestellung 19500 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF710 | Hersteller : Siliconix |
N-MOSFET 0.8A 400V 20W 3.6Ω IRF710 IRF710 TIRF710 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 90 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF710 | Hersteller : ONSEMI |
Description: ONSEMI - IRF710 - IRF710, SINGLE MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 4400 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF710 Produktcode: 123225 |
Hersteller : SILI |
Transistoren > MOSFET N-CH Gehäuse: TO-220 Uds,V: 400 V Idd,A: 2 A Rds(on), Ohm: 3,6 Ohm Ciss, pF/Qg, nC: 170/17 JHGF: THT |
Produkt ist nicht verfügbar
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IRF710 | Hersteller : Vishay | Trans MOSFET N-CH 400V 2A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IRF710 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 400V 2A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRF710 | Hersteller : Vishay / Siliconix | MOSFET RECOMMENDED ALT IRF710PBF |
Produkt ist nicht verfügbar |
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IRF710 | Hersteller : onsemi / Fairchild | MOSFET |
Produkt ist nicht verfügbar |