IRF7105QTRPBF Infineon Technologies
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Technische Details IRF7105QTRPBF Infineon Technologies
Description: MOSFET N/P-CH 25V 3.5A/2.3A 8SO, Packaging: Cut Tape (CT), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A, Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V, Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Obsolete.
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IRF7105QTRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N/P-CH 25V 3.5A/2.3A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete |
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