Technische Details IRF6894MTRPBF Infineon / IR
Description: 25V 999A DIRECTFET-LV, Packaging: Bulk, Package / Case: DirectFET™ Isometric MX, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 160A (Tc), Rds On (Max) @ Id, Vgs: 1.3mOhm @ 33A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 2.1W (Ta), 54W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 100µA, Supplier Device Package: DIRECTFET™ MX, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4160 pF @ 13 V.
Weitere Produktangebote IRF6894MTRPBF
Foto | Bezeichnung | Hersteller | Beschreibung |
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IRF6894MTRPBF Produktcode: 101384 |
Verschiedene Bauteile > Other components 3 |
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IRF6894MTRPBF | Hersteller : Infineon Technologies | Trans MOSFET N-CH Si 25V 37A 7-Pin Direct-FET MX T/R |
Produkt ist nicht verfügbar |
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IRF6894MTRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 170A; 54W; DirectFET Kind of package: reel Power dissipation: 54W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Mounting: SMD Case: DirectFET Drain-source voltage: 25V Drain current: 170A Type of transistor: N-MOSFET Anzahl je Verpackung: 4800 Stücke |
Produkt ist nicht verfügbar |
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IRF6894MTRPBF | Hersteller : International Rectifier |
Description: 25V 999A DIRECTFET-LV Packaging: Bulk Package / Case: DirectFET™ Isometric MX Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 160A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 33A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 2.1W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 100µA Supplier Device Package: DIRECTFET™ MX Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4160 pF @ 13 V |
Produkt ist nicht verfügbar |
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IRF6894MTRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 170A; 54W; DirectFET Kind of package: reel Power dissipation: 54W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Mounting: SMD Case: DirectFET Drain-source voltage: 25V Drain current: 170A Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |