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IRF6892STRPBF International Rectifier
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Description: 25V 999A DIRECTFET-LV
Packaging: Bulk
Package / Case: DirectFET™ Isometric S3C
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 125A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 28A, 10V
Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 50µA
Supplier Device Package: DIRECTFET™ S3C
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 13 V
auf Bestellung 3790 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
392+ | 1.24 EUR |
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Technische Details IRF6892STRPBF International Rectifier
Description: 25V 999A DIRECTFET-LV, Packaging: Bulk, Package / Case: DirectFET™ Isometric S3C, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 125A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 28A, 10V, Power Dissipation (Max): 2.1W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 50µA, Supplier Device Package: DIRECTFET™ S3C, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 13 V.
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IRF6892STRPBF | Hersteller : Infineon Technologies |
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auf Bestellung 4619 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF6892STRPBF | Hersteller : Infineon Technologies |
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