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IRF6795MTR1PBF

IRF6795MTR1PBF Infineon Technologies


infineon-irf6795m-datasheet-v01_01-en.pdf Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 25V 32A 7-Pin Direct-FET MX T/R
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Technische Details IRF6795MTR1PBF Infineon Technologies

Description: MOSFET N-CH 25V 32A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric MX, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 160A (Tc), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 32A, 10V, Power Dissipation (Max): 2.8W (Ta), 75W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 100µA, Supplier Device Package: DIRECTFET™ MX, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4280 pF @ 13 V.

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IRF6795MTR1PBF IRF6795MTR1PBF Hersteller : Infineon / IR irf6795mpbf-1227229.pdf MOSFET 25V 1 N-CH HEXFET 1.8mOhms 35nC
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IRF6795MTR1PBF IRF6795MTR1PBF Hersteller : Infineon Technologies infineon-irf6795m-datasheet-v01_01-en.pdf Trans MOSFET N-CH Si 25V 32A 7-Pin Direct-FET MX T/R
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
IRF6795MTR1PBF Hersteller : Infineon irf6795mpbf.pdf?fileId=5546d462533600a4015355ed99cd1aa6
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IRF6795MTR1PBF IRF6795MTR1PBF Hersteller : Infineon Technologies irf6795mpbf.pdf Trans MOSFET N-CH Si 25V 32A 7-Pin Direct-FET MX T/R
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IRF6795MTR1PBF IRF6795MTR1PBF Hersteller : Infineon Technologies irf6795mpbf.pdf?fileId=5546d462533600a4015355ed99cd1aa6 Description: MOSFET N-CH 25V 32A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 32A, 10V
Power Dissipation (Max): 2.8W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4280 pF @ 13 V
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