IRF6785MTRPBF Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 200V 3.4A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 4.2A, 10V
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DIRECTFET™ MZ
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
auf Bestellung 9600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4800+ | 1.82 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRF6785MTRPBF Infineon Technologies
Description: MOSFET N-CH 200V 3.4A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric MZ, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 19A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 4.2A, 10V, Power Dissipation (Max): 2.8W (Ta), 57W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: DIRECTFET™ MZ, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V.
Weitere Produktangebote IRF6785MTRPBF nach Preis ab 1.5 EUR bis 5.68 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IRF6785MTRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 200V 3.4A 7-Pin Direct-FET MZ T/R |
auf Bestellung 4058 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
IRF6785MTRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 200V 3.4A 7-Pin Direct-FET MZ T/R |
auf Bestellung 4058 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
IRF6785MTRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 200V 3.4A 7-Pin Direct-FET MZ T/R |
auf Bestellung 14390 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
IRF6785MTRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 200V 3.4A 7-Pin Direct-FET MZ T/R |
auf Bestellung 14390 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
IRF6785MTRPBF | Hersteller : Infineon Technologies |
MOSFET 200V 1 x N-CH HEXFET for Digital Audio |
auf Bestellung 1293 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
|
IRF6785MTRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 200V 3.4A DIRECTFET Packaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric MZ Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 19A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 4.2A, 10V Power Dissipation (Max): 2.8W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: DIRECTFET™ MZ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V |
auf Bestellung 9600 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
 |
IRF6785MTRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 200V 3.4A 7-Pin Direct-FET MZ T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||||
 |
IRF6785MTRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 57W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 19A Power dissipation: 57W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced Anzahl je Verpackung: 4800 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||||||
|
|
IRF6785MTRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 200V 3.4A 7-Pin Direct-FET MZ T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||||
|
|
IRF6785MTRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 200V 3.4A 7-Pin Direct-FET MZ T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||||
|
|
IRF6785MTRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 57W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 19A Power dissipation: 57W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
Produkt ist nicht verfügbar |