IRF6718L2TRPBF Infineon Technologies
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Technische Details IRF6718L2TRPBF Infineon Technologies
Description: MOSFET N-CH 25V 61A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric L6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 270A (Tc), Rds On (Max) @ Id, Vgs: 0.7mOhm @ 61A, 10V, Power Dissipation (Max): 4.3W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 150µA, Supplier Device Package: DIRECTFET L6, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 13 V.
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IRF6718L2TRPBF Produktcode: 98275 |
 Transistoren > MOSFET N-CH |
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IRF6718L2TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 25V 61A 13-Pin Direct-FET L6 T/R |
Produkt ist nicht verfügbar |
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IRF6718L2TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 25V 61A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric L6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 270A (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 61A, 10V Power Dissipation (Max): 4.3W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 150µA Supplier Device Package: DIRECTFET L6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 13 V |
Produkt ist nicht verfügbar |