IRF6618TRPBF Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 30V 30A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MT
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 250µA
Supplier Device Package: DIRECTFET™ MT
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 15 V
auf Bestellung 3903 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 4.24 EUR |
| 10+ | 3.52 EUR |
| 100+ | 2.8 EUR |
| 500+ | 2.37 EUR |
| 1000+ | 2.01 EUR |
| 2000+ | 1.91 EUR |
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Technische Details IRF6618TRPBF Infineon Technologies
Description: MOSFET N-CH 30V 30A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric MT, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 170A (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V, Power Dissipation (Max): 2.8W (Ta), 89W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 250µA, Supplier Device Package: DIRECTFET™ MT, Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 15 V.
Weitere Produktangebote IRF6618TRPBF nach Preis ab 2.24 EUR bis 5.05 EUR
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IRF6618TRPBF | Hersteller : Infineon Technologies |
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auf Bestellung 4595 Stücke: Lieferzeit 302-306 Tag (e) |
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IRF6618TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 29A; 89W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 29A Power dissipation: 89W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced Anzahl je Verpackung: 4800 Stücke |
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IRF6618TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 30A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MT Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 170A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 250µA Supplier Device Package: DIRECTFET™ MT Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 15 V |
Produkt ist nicht verfügbar |
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IRF6618TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 29A; 89W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 29A Power dissipation: 89W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
Produkt ist nicht verfügbar |