Technische Details IRF6100 IOR
Description: MOSFET P-CH 20V 5.1A 4FLIPFET, Packaging: Tape & Reel (TR), Package / Case: 4-FlipFet™, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), Rds On (Max) @ Id, Vgs: 65mOhm @ 5.1A, 4.5V, Power Dissipation (Max): 2.2W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 4-FlipFet™, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V.
Weitere Produktangebote IRF6100
Foto | Bezeichnung | Hersteller | Beschreibung |
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IRF6100 | Hersteller : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-FlipFet™ Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 5.1A, 4.5V Power Dissipation (Max): 2.2W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 4-FlipFet™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V |
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