IRF540NLPBF Infineon Technologies
auf Bestellung 3144 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 442+ | 1.31 EUR |
| 500+ | 1.21 EUR |
| 1000+ | 1.10 EUR |
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Technische Details IRF540NLPBF Infineon Technologies
Description: MOSFET N-CH 100V 33A TO262, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-262, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25.
Weitere Produktangebote IRF540NLPBF nach Preis ab 1.21 EUR bis 1.31 EUR
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IRF540NLPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH Si 100V 33A 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 582 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF540NLPBF | Hersteller : INFINEON |
Description: INFINEON - IRF540NLPBF - Leistungs-MOSFET, n-Kanal, 100 V, 33 A, 0.044 ohm, TO-262, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 33A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 140W Bauform - Transistor: TO-262 Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.044ohm SVHC: No SVHC (08-Jul-2021) |
auf Bestellung 125 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF540NLPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 100V 33A 3-Pin(3+Tab) TO-262 Tube |
Produkt ist nicht verfügbar |
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IRF540NLPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 33A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
Produkt ist nicht verfügbar |