IRF5305STRRPBF Infineon Technologies
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 1.25 EUR |
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Technische Details IRF5305STRRPBF Infineon Technologies
Description: MOSFET P-CH 55V 31A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V, Power Dissipation (Max): 3.8W (Ta), 110W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V.
Weitere Produktangebote IRF5305STRRPBF nach Preis ab 1.76 EUR bis 1.98 EUR
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IRF5305STRRPBF | Hersteller : Infineon Technologies |
 Trans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF5305STRRPBF | Hersteller : Infineon Technologies |
Trans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IRF5305STRRPBF | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 55V 31A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
Produkt ist nicht verfügbar |