IRF4905STRLPBF Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 42A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET P-CH 55V 42A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 17600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
800+ | 2.39 EUR |
1600+ | 2.03 EUR |
2400+ | 1.93 EUR |
5600+ | 1.86 EUR |
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Technische Details IRF4905STRLPBF Infineon Technologies
Description: MOSFET P-CH 55V 42A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V, Power Dissipation (Max): 170W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25.
Weitere Produktangebote IRF4905STRLPBF nach Preis ab 1.72 EUR bis 7.66 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IRF4905STRLPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; D2PAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -74A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3710 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF4905STRLPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; D2PAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -74A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
auf Bestellung 3710 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF4905STRLPBF | Hersteller : Infineon Technologies | P-channel MOSFET with a maximum continuous drain current of 74 A, maximum operating voltage of 55 V, and maximum power dissipation of 170 W. |
auf Bestellung 1669 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF4905STRLPBF | Hersteller : Infineon Technologies | P-channel MOSFET with a maximum continuous drain current of 74 A, maximum operating voltage of 55 V, and maximum power dissipation of 170 W. |
auf Bestellung 44 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF4905STRLPBF | Hersteller : Infineon Technologies | P-channel MOSFET with a maximum continuous drain current of 74 A, maximum operating voltage of 55 V, and maximum power dissipation of 170 W. |
auf Bestellung 44 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF4905STRLPBF | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 55V 42A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
auf Bestellung 18535 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF4905STRLPBF | Hersteller : Infineon Technologies | MOSFETs MOSFT PCh -55V -74A 20mOhm 120nC |
auf Bestellung 42570 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF4905STRLPBF | Hersteller : INFINEON |
Description: INFINEON - IRF4905STRLPBF - Leistungs-MOSFET, p-Kanal, 55 V, 74 A, 0.02 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 55V rohsCompliant: Y-EX Dauer-Drainstrom Id: 74A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 200W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 20V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.02ohm SVHC: Lead (17-Jan-2023) |
auf Bestellung 13867 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF4905STRLPBF | Hersteller : INFINEON |
Description: INFINEON - IRF4905STRLPBF - Leistungs-MOSFET, p-Kanal, 55 V, 74 A, 0.02 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 55V rohsCompliant: Y-EX Dauer-Drainstrom Id: 74A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 200W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 20V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.02ohm SVHC: Lead (17-Jan-2023) |
auf Bestellung 13867 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF4905STRLPBF | Hersteller : Infineon | Транз. Пол. БМ P-HEXFET D2PAK Udss=-55V; Id=-74A; Pdmax=3,8W; Rds=0,02 Ohm |
auf Bestellung 114 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF4905STRLPBF Produktcode: 173205 |
Transistoren > Transistoren P-Kanal-Feld |
Produkt ist nicht verfügbar
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IRF4905STRLPBF | Hersteller : Infineon Technologies | Trans MOSFET P-CH Si 55V 74A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IRF4905STRLPBF | Hersteller : Infineon Technologies | P-channel MOSFET with a maximum continuous drain current of 74 A, maximum operating voltage of 55 V, and maximum power dissipation of 170 W. |
Produkt ist nicht verfügbar |