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IRF40H233XTMA1 Infineon Technologies


Infineon_IRF40H233_DataSheet_v02_03_EN-1840702.pdf Hersteller: Infineon Technologies
MOSFET TRENCH <= 40V
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Technische Details IRF40H233XTMA1 Infineon Technologies

Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; StrongIRFET™; unipolar; 40V; 32A; 50W, Type of transistor: N-MOSFET x2, Technology: StrongIRFET™, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 32A, Pulsed drain current: 140A, Power dissipation: 50W, Case: PQFN5X6, Gate-source voltage: ±20V, On-state resistance: 6.2mΩ, Mounting: SMD, Kind of channel: enhanced, Anzahl je Verpackung: 4000 Stücke.

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IRF40H233XTMA1 Hersteller : Infineon Technologies infineon-irf40h233-datasheet-v02_03-en.pdf Trans MOSFET N-CH Si 40V 201A 8-Pin QFN EP T/R
Produkt ist nicht verfügbar
IRF40H233XTMA1 Hersteller : INFINEON TECHNOLOGIES Infineon-IRF40H233-DS-v01_00-EN.pdf?fileId=5546d462689a790c0168a1d5500962d9 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; StrongIRFET™; unipolar; 40V; 32A; 50W
Type of transistor: N-MOSFET x2
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 32A
Pulsed drain current: 140A
Power dissipation: 50W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF40H233XTMA1 IRF40H233XTMA1 Hersteller : Infineon Technologies Infineon-IRF40H233-DS-v01_00-EN.pdf?fileId=5546d462689a790c0168a1d5500962d9 Description: MOSFET 2N-CH 40V 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Supplier Device Package: PG-TDSON-8-900
Part Status: Obsolete
Produkt ist nicht verfügbar
IRF40H233XTMA1 Hersteller : INFINEON TECHNOLOGIES Infineon-IRF40H233-DS-v01_00-EN.pdf?fileId=5546d462689a790c0168a1d5500962d9 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; StrongIRFET™; unipolar; 40V; 32A; 50W
Type of transistor: N-MOSFET x2
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 32A
Pulsed drain current: 140A
Power dissipation: 50W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar