IRF40H233ATMA1 ROCHESTER ELECTRONICS

Description: MOSFET 2N-CH 40V 65A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.8W (Ta), 50W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 20V, Rds On (Max) @ Id, Vgs: 6.2mOhm @ 35A, 10V, Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V, Vgs(th) (Max) @ Id: 3.9V @ 50µA, Supplier Device Package: PG-TDSON-8-4.