IRF40DM229

IRF40DM229 International Rectifier


INFN-S-A0002272331-1.pdf?t.download=true&u=5oefqw Hersteller: International Rectifier
Description: MOSFET N-CH 40V 159A DIRECTFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric MF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 159A (Tc)
Rds On (Max) @ Id, Vgs: 1.85mOhm @ 97A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: DirectFET™ Isometric MF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5317 pF @ 25 V
auf Bestellung 4396 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
249+1.99 EUR
Mindestbestellmenge: 249
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Technische Details IRF40DM229 International Rectifier

Description: IRF40 - 12V-300V N-CHANNEL POWER, Packaging: Bulk, Package / Case: DirectFET™ Isometric MF, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 159A (Tc), Rds On (Max) @ Id, Vgs: 1.85mOhm @ 97A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 100µA, Supplier Device Package: DirectFET™ Isometric MF, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5317 pF @ 25 V.

Weitere Produktangebote IRF40DM229 nach Preis ab 1.99 EUR bis 4.33 EUR

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IRF40DM229 IRF40DM229 Hersteller : Infineon Technologies INFN-S-A0002272331-1.pdf?t.download=true&u=5oefqw Description: IRF40 - 12V-300V N-CHANNEL POWER
Packaging: Bulk
Package / Case: DirectFET™ Isometric MF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 159A (Tc)
Rds On (Max) @ Id, Vgs: 1.85mOhm @ 97A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: DirectFET™ Isometric MF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5317 pF @ 25 V
auf Bestellung 4194 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
249+1.99 EUR
Mindestbestellmenge: 249
IRF40DM229 IRF40DM229 Hersteller : Infineon Technologies Infineon-IRF40DM229-DS-v02_00-EN-1101539.pdf MOSFET TRENCH <= 40V
auf Bestellung 844 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.33 EUR
100+ 3.75 EUR
250+ 3.31 EUR
500+ 2.94 EUR
IRF40DM229 IRF40DM229 Hersteller : Infineon Technologies 448infineon-irf40dm229-ds-v02_00-en.pdffileid5546d462557e6e890155a15.pdf Trans MOSFET N-CH 40V 159A 6-Pin WDSON T/R
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IRF40DM229 IRF40DM229 Hersteller : Infineon Technologies 448infineon-irf40dm229-ds-v02_00-en.pdffileid5546d462557e6e890155a15.pdf IRF40DM229 Infineon Technologies AG Transistors MOSFETs N-CH 40V 159A 6-Pin WDSON T/R - Arrow.com
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