auf Bestellung 750 Stücke:
Lieferzeit 220-224 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 7.71 EUR |
| 10+ | 6.93 EUR |
| 100+ | 5.67 EUR |
| 500+ | 4.82 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRF2804STRRPBF Infineon Technologies
Description: MOSFET N-CH 40V 75A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 75A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V.
Weitere Produktangebote IRF2804STRRPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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IRF2804STRRPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH Si 40V 270A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IRF2804STRRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; D2PAK Mounting: SMD Case: D2PAK Drain-source voltage: 40V Drain current: 280A Type of transistor: N-MOSFET Power dissipation: 330W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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IRF2804STRRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 40V 270A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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 |
IRF2804STRRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 75A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRF2804STRRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; D2PAK Mounting: SMD Case: D2PAK Drain-source voltage: 40V Drain current: 280A Type of transistor: N-MOSFET Power dissipation: 330W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhanced |
Produkt ist nicht verfügbar |