IRF2804LPBF Infineon Technologies
auf Bestellung 762 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.95 EUR |
| 10+ | 4.15 EUR |
| 25+ | 3.91 EUR |
| 100+ | 3.36 EUR |
| 250+ | 3.17 EUR |
| 500+ | 2.97 EUR |
| 1000+ | 2.55 EUR |
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Technische Details IRF2804LPBF Infineon Technologies
Description: MOSFET N-CH 40V 75A TO262, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 75A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-262, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V.
Weitere Produktangebote IRF2804LPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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IRF2804LPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH Si 40V 270A 3-Pin(3+Tab) TO-262 Tube |
Produkt ist nicht verfügbar |
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IRF2804LPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 40V 270A 3-Pin(3+Tab) TO-262 Tube |
Produkt ist nicht verfügbar |
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IRF2804LPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 40V 270A 3-Pin(3+Tab) TO-262 Tube |
Produkt ist nicht verfügbar |
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IRF2804LPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; TO262 Mounting: THT Case: TO262 Drain-source voltage: 40V Drain current: 280A Type of transistor: N-MOSFET Power dissipation: 330W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IRF2804LPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 75A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 75A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRF2804LPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; TO262 Mounting: THT Case: TO262 Drain-source voltage: 40V Drain current: 280A Type of transistor: N-MOSFET Power dissipation: 330W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced |
Produkt ist nicht verfügbar |