IR2122 Infineon Technologies
Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 13V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 250ns, 250ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 130mA, 130mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HIGH-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 13V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 250ns, 250ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 130mA, 130mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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Technische Details IR2122 Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8DIP, Packaging: Tube, Package / Case: 8-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Voltage - Supply: 13V ~ 20V, Input Type: Inverting, High Side Voltage - Max (Bootstrap): 600 V, Supplier Device Package: 8-PDIP, Rise / Fall Time (Typ): 250ns, 250ns, Channel Type: Single, Driven Configuration: High-Side, Number of Drivers: 1, Gate Type: IGBT, N-Channel MOSFET, Logic Voltage - VIL, VIH: 0.8V, 3V, Current - Peak Output (Source, Sink): 130mA, 130mA, Part Status: Obsolete, DigiKey Programmable: Not Verified.
Weitere Produktangebote IR2122
Foto | Bezeichnung | Hersteller | Beschreibung |
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IR2122 | Hersteller : Infineon / IR | Gate Drivers |
Produkt ist nicht verfügbar |