IR2101SPBF Infineon Technologies
auf Bestellung 2375 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2375+ | 1.46 EUR |
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Technische Details IR2101SPBF Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Voltage - Supply: 10V ~ 20V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 600 V, Supplier Device Package: 8-SOIC, Rise / Fall Time (Typ): 100ns, 50ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: IGBT, N-Channel MOSFET, Logic Voltage - VIL, VIH: 0.8V, 3V, Current - Peak Output (Source, Sink): 210mA, 360mA, Part Status: Not For New Designs, DigiKey Programmable: Not Verified.
Weitere Produktangebote IR2101SPBF nach Preis ab 1.15 EUR bis 4.26 EUR
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IR2101SPBF | Hersteller : Infineon Technologies |
 Driver 600V 2-OUT High and Low Side Inv/Non-Inv 8-Pin SOIC N Tube |
auf Bestellung 3491 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2101SPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -270...130mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 160ns Turn-off time: 150ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 546 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2101SPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -270...130mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 160ns Turn-off time: 150ns |
auf Bestellung 546 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2101SPBF | Hersteller : Infineon Technologies |
Driver 600V 2-OUT High and Low Side Inv/Non-Inv 8-Pin SOIC N Tube |
auf Bestellung 2375 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2101SPBF | Hersteller : Infineon Technologies |
Driver 600V 2-OUT High and Low Side Inv/Non-Inv 8-Pin SOIC N Tube |
auf Bestellung 1240 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2101SPBF | Hersteller : Infineon Technologies |
Gate Drivers HI LO SIDE DRVR 600V 130mA 50ns |
auf Bestellung 4823 Stücke: Lieferzeit 10-14 Tag (e) |
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IR2101SPBF | Hersteller : Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 100ns, 50ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 210mA, 360mA Part Status: Not For New Designs DigiKey Programmable: Not Verified |
auf Bestellung 4441 Stücke: Lieferzeit 10-14 Tag (e) |
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IR2101SPBF | Hersteller : Infineon Technologies |
Driver 600V 0.36A 2-OUT High and Low Side 8-Pin SOIC N Tube |
auf Bestellung 2396 Stücke: Lieferzeit 14-21 Tag (e) |
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| IR2101SPBF | Hersteller : International Rectifier/Infineon |
Драйвер MOSFET; Uживл, В = 10...20; Тип вх. сигн. = неінвертуючий; Io = 210 мА; Dt = 160 нс; Umax, B = 600; Конфіг = 1 конфігурація з верхнім і нижнім ключами; 2 виходи; Тексп, °С = -40...+125; SOICN-8 |
auf Bestellung 55 Stücke: Lieferzeit 14-21 Tag (e) |
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| IR2101S/PBF | Hersteller : IR |
auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |