auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 9.13 EUR |
| 10+ | 6.27 EUR |
| 25+ | 6.11 EUR |
| 100+ | 5.07 EUR |
| 250+ | 4.79 EUR |
| 500+ | 3.64 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IQFH55N04NM6ATMA1 Infineon Technologies
Description: TRENCH .
Weitere Produktangebote IQFH55N04NM6ATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| IQFH55N04NM6ATMA1 | Hersteller : Infineon Technologies |
 TRENCH <= 40V |
Produkt ist nicht verfügbar |
||
| IQFH55N04NM6ATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH <= 40V Packaging: Tape & Reel (TR) Package / Case: 12-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 451A (Tc) Rds On (Max) @ Id, Vgs: 0.55mOhm @ 100A, 10V Power Dissipation (Max): 3W (Ta), 214W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1.05mA Supplier Device Package: PG-TSON-12-1 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 20 V |
Produkt ist nicht verfügbar |
||
| IQFH55N04NM6ATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH <= 40V Packaging: Cut Tape (CT) Package / Case: 12-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 451A (Tc) Rds On (Max) @ Id, Vgs: 0.55mOhm @ 100A, 10V Power Dissipation (Max): 3W (Ta), 214W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1.05mA Supplier Device Package: PG-TSON-12-1 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 20 V |
Produkt ist nicht verfügbar |