auf Bestellung 4980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 7.6 EUR |
10+ | 6.41 EUR |
25+ | 6.04 EUR |
100+ | 5.17 EUR |
250+ | 4.89 EUR |
500+ | 4.59 EUR |
1000+ | 3.94 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IQD020N10NM5ATMA1 Infineon Technologies
Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 276A (Tc), Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V, Power Dissipation (Max): 3W (Ta), 333W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 159µA, Supplier Device Package: PG-TSON-8-9, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V.
Weitere Produktangebote IQD020N10NM5ATMA1 nach Preis ab 3.21 EUR bis 7.34 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IQD020N10NM5ATMA1 | Hersteller : Infineon Technologies | N-channel Power MOSFET |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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IQD020N10NM5ATMA1 | Hersteller : Infineon Technologies | N-channel Power MOSFET |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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IQD020N10NM5ATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH >=100V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 276A (Tc) Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 159µA Supplier Device Package: PG-TSON-8-9 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V |
auf Bestellung 4985 Stücke: Lieferzeit 10-14 Tag (e) |
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IQD020N10NM5ATMA1 | Hersteller : Infineon Technologies | N-channel Power MOSFET |
Produkt ist nicht verfügbar |
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IQD020N10NM5ATMA1 | Hersteller : Infineon Technologies | N-channel Power MOSFET |
Produkt ist nicht verfügbar |
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IQD020N10NM5ATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH >=100V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 276A (Tc) Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 159µA Supplier Device Package: PG-TSON-8-9 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V |
Produkt ist nicht verfügbar |