IQD016N08NM5CGATMA1 Infineon Technologies
auf Bestellung 2507 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 7.32 EUR |
| 10+ | 6.16 EUR |
| 25+ | 5.81 EUR |
| 100+ | 4.98 EUR |
| 250+ | 4.7 EUR |
| 500+ | 4.42 EUR |
| 1000+ | 3.8 EUR |
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Technische Details IQD016N08NM5CGATMA1 Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR, Packaging: Tape & Reel (TR), Package / Case: 9-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 323A (Tc), Rds On (Max) @ Id, Vgs: 1.57mOhm @ 50A, 10V, Power Dissipation (Max): 3W (Ta), 333W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 159µA, Supplier Device Package: PG-TTFN-9-U02, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V.
Weitere Produktangebote IQD016N08NM5CGATMA1 nach Preis ab 3.37 EUR bis 9.12 EUR
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IQD016N08NM5CGATMA1 | Hersteller : Infineon Technologies |
 Description: OPTIMOS 6 POWER-TRANSISTORPackaging: Cut Tape (CT) Package / Case: 9-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 323A (Tc) Rds On (Max) @ Id, Vgs: 1.57mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 159µA Supplier Device Package: PG-TTFN-9-U02 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V |
auf Bestellung 4990 Stücke: Lieferzeit 10-14 Tag (e) |
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| IQD016N08NM5CGATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 80V 31A 9-Pin TTFN EP T/R |
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IQD016N08NM5CGATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 80V 31A 9-Pin TTFN EP T/R |
Produkt ist nicht verfügbar |
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IQD016N08NM5CGATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 80V 31A 9-Pin TTFN EP T/R |
Produkt ist nicht verfügbar |
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IQD016N08NM5CGATMA1 | Hersteller : Infineon Technologies |
Description: OPTIMOS 6 POWER-TRANSISTOR Packaging: Tape & Reel (TR) Package / Case: 9-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 323A (Tc) Rds On (Max) @ Id, Vgs: 1.57mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 159µA Supplier Device Package: PG-TTFN-9-U02 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V |
Produkt ist nicht verfügbar |