IQD009N06NM5CGATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: OPTIMOS 6 POWER-TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 445A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 163µA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
auf Bestellung 4994 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 6.79 EUR |
| 10+ | 6.1 EUR |
| 25+ | 5.77 EUR |
| 100+ | 5 EUR |
| 250+ | 4.74 EUR |
| 500+ | 4.26 EUR |
| 1000+ | 3.59 EUR |
| 2500+ | 3.41 EUR |
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Technische Details IQD009N06NM5CGATMA1 Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR, Packaging: Tape & Reel (TR), Package / Case: 9-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 445A (Tc), Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V, Power Dissipation (Max): 3W (Ta), 333W (Tc), Vgs(th) (Max) @ Id: 3.3V @ 163µA, Supplier Device Package: PG-TTFN-9-U02, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V.
Weitere Produktangebote IQD009N06NM5CGATMA1 nach Preis ab 3.64 EUR bis 7.04 EUR
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IQD009N06NM5CGATMA1 | Hersteller : Infineon Technologies |
MOSFET TRENCH 40<-<100V |
auf Bestellung 4915 Stücke: Lieferzeit 10-14 Tag (e) |
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Trans MOSFET N-CH 60V 42A T/R |
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IQD009N06NM5CGATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 42A 9-Pin TTFN EP T/R |
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IQD009N06NM5CGATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 42A 9-Pin TTFN EP T/R |
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IQD009N06NM5CGATMA1 | Hersteller : Infineon Technologies |
Description: OPTIMOS 6 POWER-TRANSISTOR Packaging: Tape & Reel (TR) Package / Case: 9-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 445A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 163µA Supplier Device Package: PG-TTFN-9-U02 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V |
Produkt ist nicht verfügbar |