IQD005N04NM6ATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 610A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.449mA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 610A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.449mA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
auf Bestellung 4889 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.41 EUR |
10+ | 4.44 EUR |
100+ | 3.27 EUR |
500+ | 2.85 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IQD005N04NM6ATMA1 Infineon Technologies
Transistoren > MOSFET N-CH, .
Weitere Produktangebote IQD005N04NM6ATMA1 nach Preis ab 2.48 EUR bis 6.51 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IQD005N04NM6ATMA1 | Hersteller : Infineon Technologies | MOSFETs TRENCH <= 40V |
auf Bestellung 4980 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||
IQD005N04NM6ATMA1 | Hersteller : Infineon Technologies | N-channel Power MOSFET |
auf Bestellung 230 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
IQD005N04NM6ATMA1 | Hersteller : Infineon Technologies | N-channel Power MOSFET |
auf Bestellung 230 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
IQD005N04NM6ATMA1 Produktcode: 198771 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
|
|||||||||||||
IQD005N04NM6ATMA1 | Hersteller : Infineon Technologies | N-channel Power MOSFET |
Produkt ist nicht verfügbar |
||||||||||||
IQD005N04NM6ATMA1 | Hersteller : Infineon Technologies | TRENCH <= 40V |
Produkt ist nicht verfügbar |
||||||||||||
IQD005N04NM6ATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH <= 40V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 610A (Tc) Rds On (Max) @ Id, Vgs: 0.47mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1.449mA Supplier Device Package: PG-TSON-8-9 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V |
Produkt ist nicht verfügbar |