IPZ60R070P6FKSA1 Infineon Technologies
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Lieferzeit 744-748 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 16.02 EUR |
| 10+ | 14.48 EUR |
| 100+ | 12 EUR |
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Technische Details IPZ60R070P6FKSA1 Infineon Technologies
Description: MOSFET N-CH 600V 53.5A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 53.5A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 20.6A, 10V, Power Dissipation (Max): 391W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.72mA, Supplier Device Package: PG-TO247-4, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 100 V.
Weitere Produktangebote IPZ60R070P6FKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IPZ60R070P6FKSA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 600V 53.5A 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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IPZ60R070P6FKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 53.5A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53.5A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 20.6A, 10V Power Dissipation (Max): 391W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.72mA Supplier Device Package: PG-TO247-4 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 100 V |
Produkt ist nicht verfügbar |