IPWS65R022CFD7AXKSA1 Infineon Technologies
auf Bestellung 154 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 34.53 EUR |
10+ | 30.69 EUR |
25+ | 28.65 EUR |
50+ | 27.74 EUR |
100+ | 26.84 EUR |
240+ | 25.04 EUR |
480+ | 23.04 EUR |
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Technische Details IPWS65R022CFD7AXKSA1 Infineon Technologies
Description: AUTOMOTIVE_COOLMOS PG-TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 96A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 58.2A, 10V, Power Dissipation (Max): 446W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 2.91mA, Supplier Device Package: PG-TO247-3-31, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11659 pF @ 400 V.
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IPWS65R022CFD7AXKSA1 | Hersteller : Infineon Technologies |
Description: AUTOMOTIVE_COOLMOS PG-TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 96A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 58.2A, 10V Power Dissipation (Max): 446W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2.91mA Supplier Device Package: PG-TO247-3-31 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11659 pF @ 400 V |
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