auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 7.09 EUR |
| 10+ | 5.28 EUR |
| 25+ | 5.16 EUR |
| 100+ | 3.77 EUR |
| 240+ | 3.75 EUR |
| 480+ | 3.1 EUR |
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Technische Details IPW65R190CFDFKSA2 Infineon Technologies
Description: MOSFET N-CH 650V 17.5A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V, Power Dissipation (Max): 151W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 700µA, Supplier Device Package: PG-TO247-3-41, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V.
Weitere Produktangebote IPW65R190CFDFKSA2 nach Preis ab 2.88 EUR bis 7.6 EUR
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IPW65R190CFDFKSA2 | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 650V 17.5A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V Power Dissipation (Max): 151W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 700µA Supplier Device Package: PG-TO247-3-41 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V |
auf Bestellung 1430 Stücke: Lieferzeit 10-14 Tag (e) |
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IPW65R190CFDFKSA2 | Hersteller : Infineon Technologies |
650V Power Transistor |
Produkt ist nicht verfügbar |
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IPW65R190CFDFKSA2 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 17.5A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |