IPTG018N10NM5ATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 273A Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 273W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 202µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
Description: TRENCH >=100V PG-HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 273A Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 273W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 202µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 9.75 EUR |
10+ | 8.19 EUR |
100+ | 6.62 EUR |
500+ | 5.89 EUR |
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Technische Details IPTG018N10NM5ATMA1 Infineon Technologies
Description: TRENCH >=100V PG-HSOG-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Gull Wing, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 273A Tc), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 150A, 10V, Power Dissipation (Max): 3.8W (Ta), 273W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 202µA, Supplier Device Package: PG-HSOG-8-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V.
Weitere Produktangebote IPTG018N10NM5ATMA1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IPTG018N10NM5ATMA1 | Hersteller : Infineon Technologies | SP005575192 |
Produkt ist nicht verfügbar |
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IPTG018N10NM5ATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH >=100V PG-HSOG-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 273A Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 150A, 10V Power Dissipation (Max): 3.8W (Ta), 273W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 202µA Supplier Device Package: PG-HSOG-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V |
Produkt ist nicht verfügbar |
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IPTG018N10NM5ATMA1 | Hersteller : Infineon Technologies | MOSFET TRENCH >=100V |
Produkt ist nicht verfügbar |